Deck 4: Antenna Arrays, Power Amplifiers, and Gunn Diodes

ملء الشاشة (f)
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سؤال
The electrical size of antenna is increased by antenna array to avoid size lobes compared to single antenna.
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لقلب البطاقة.
سؤال
Total resultant field obtained by the antenna array is given by which of following?

A)vector superposition of individual field from the element
B)maximum field from individual sources in the array
C)minimum field from individual sources in the array
D)field from the individual source
سؤال
If the progressive shift in antenna array is equal to zero then it is called __________

A)broad side
B)end-fire
C)yagi-uda
D)fishbone antenna
سؤال
What is the progressive phase shift of the end-fire array?

A)0
B)90
C)180
D)60
سؤال
Which of the following statement about antenna array is false?

A)field pattern is the product of individual elements in array
B)field pattern is the sum of individual elements in array
C)resultant field is the vector superposition of the fields from individual elements in array
D)high directivity can be achieved for long distance communications
سؤال
__________are used in the final stages of radar and radio transmitters to increase the radiated power level.

A)power amplifiers
B)oscillators
C)transistors
D)attenuators
سؤال
Important factors to be considered for power amplifier design are:

A)efficiency
B)gain
C)thermal effect
D)all of the mentioned
سؤال
Gain of power amplifiers __________  with increase in operating frequency.

A)increases
B)decreases
C)increases exponentially
D)decreases exponentially
سؤال
__________ amplifiers are linear circuits, where the transistor is biased to conduct over the entire range of the input signal cycle.

A)class a amplifiers
B)class b amplifiers
C)class c amplifiers
D)none of the mentioned
سؤال
A class B amplifier consists of __________   transistors in order to conduct the input signal over the entire cycle.

A)1
B)2
C)4
D)6
سؤال
Power amplifiers in the increasing order of efficiency is:

A)class a, b, c
B)class c, a, b
C)class b, a, c
D)efficiency of all the 3 amplifiers is the same
سؤال
Behavior of a transistor in power amplifiers is unpredictable at all input signal levels.
سؤال
If the output power of an amplifier is 10 V, and the input power supplied to the amplifier is 0.229 V given that the DC voltage used is

A)25%
B)50%
C)75%
D)35%
سؤال
If a power amplifier has an output power of 10 W, and an amplifier gain of 16.4 dB, then the input drive power is:

A)400 mw
B)225 mw
C)229 mw
D)240 mw
سؤال
GaAs is used in the fabrication of GUNN diodes because:

A)gaas is cost effective
B)it less temperature sensitive
C)it has low conduction band electrons
D)less forbidden energy gap
سؤال
In a GaAs n-type specimen, the current generated is constant irrespective of the electric filed applied to the specimen.
سؤال
When the electric field applied to GaAs specimen is less than the threshold electric field, the current in the material:

A)increases linearly
B)decreases linearly
C)increases exponentially
D)decreases exponentially
سؤال
GaAs is used in fabricating Gunn diode. Gunn diode is:

A)bulk device
B)sliced device
C)made of different type of semiconductor layers
D)none of the mentioned
سؤال
The electrodes of a Gunn diode are made of:

A)molybdenum
B)gaas
C)gold
D)copper
سؤال
When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential __________is developed in that bulk device.

A)negative resistance
B)positive resistance
C)negative voltage
D)none of the mentioned
سؤال
The number of modes of operation for n type GaAs is:

A)two
B)three
C)four
D)five
سؤال
The free electron concentration in N-type GaAs is controlled by:

A)effective doping
B)bias voltage
C)drive current
D)none of the mentioned
سؤال
The modes of operation of a Gunn diode are illustrated in a plot of voltage applied to the Gunn diode v/s frequency of operation of Gunn diode.
سؤال
The mode of operation in which the Gunn diode is not stable is:

A)gunn oscillation mode
B)limited space charge accumulation mode
C)stable amplification mode
D)bias circuit oscillation mode
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ملء الشاشة (f)
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Deck 4: Antenna Arrays, Power Amplifiers, and Gunn Diodes
1
The electrical size of antenna is increased by antenna array to avoid size lobes compared to single antenna.
True
2
Total resultant field obtained by the antenna array is given by which of following?

A)vector superposition of individual field from the element
B)maximum field from individual sources in the array
C)minimum field from individual sources in the array
D)field from the individual source
vector superposition of individual field from the element
3
If the progressive shift in antenna array is equal to zero then it is called __________

A)broad side
B)end-fire
C)yagi-uda
D)fishbone antenna
broad side
4
What is the progressive phase shift of the end-fire array?

A)0
B)90
C)180
D)60
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فتح الحزمة
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5
Which of the following statement about antenna array is false?

A)field pattern is the product of individual elements in array
B)field pattern is the sum of individual elements in array
C)resultant field is the vector superposition of the fields from individual elements in array
D)high directivity can be achieved for long distance communications
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افتح القفل للوصول البطاقات البالغ عددها 24 في هذه المجموعة.
فتح الحزمة
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6
__________are used in the final stages of radar and radio transmitters to increase the radiated power level.

A)power amplifiers
B)oscillators
C)transistors
D)attenuators
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افتح القفل للوصول البطاقات البالغ عددها 24 في هذه المجموعة.
فتح الحزمة
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7
Important factors to be considered for power amplifier design are:

A)efficiency
B)gain
C)thermal effect
D)all of the mentioned
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افتح القفل للوصول البطاقات البالغ عددها 24 في هذه المجموعة.
فتح الحزمة
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8
Gain of power amplifiers __________  with increase in operating frequency.

A)increases
B)decreases
C)increases exponentially
D)decreases exponentially
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9
__________ amplifiers are linear circuits, where the transistor is biased to conduct over the entire range of the input signal cycle.

A)class a amplifiers
B)class b amplifiers
C)class c amplifiers
D)none of the mentioned
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10
A class B amplifier consists of __________   transistors in order to conduct the input signal over the entire cycle.

A)1
B)2
C)4
D)6
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11
Power amplifiers in the increasing order of efficiency is:

A)class a, b, c
B)class c, a, b
C)class b, a, c
D)efficiency of all the 3 amplifiers is the same
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12
Behavior of a transistor in power amplifiers is unpredictable at all input signal levels.
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13
If the output power of an amplifier is 10 V, and the input power supplied to the amplifier is 0.229 V given that the DC voltage used is

A)25%
B)50%
C)75%
D)35%
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14
If a power amplifier has an output power of 10 W, and an amplifier gain of 16.4 dB, then the input drive power is:

A)400 mw
B)225 mw
C)229 mw
D)240 mw
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15
GaAs is used in the fabrication of GUNN diodes because:

A)gaas is cost effective
B)it less temperature sensitive
C)it has low conduction band electrons
D)less forbidden energy gap
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16
In a GaAs n-type specimen, the current generated is constant irrespective of the electric filed applied to the specimen.
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17
When the electric field applied to GaAs specimen is less than the threshold electric field, the current in the material:

A)increases linearly
B)decreases linearly
C)increases exponentially
D)decreases exponentially
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18
GaAs is used in fabricating Gunn diode. Gunn diode is:

A)bulk device
B)sliced device
C)made of different type of semiconductor layers
D)none of the mentioned
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19
The electrodes of a Gunn diode are made of:

A)molybdenum
B)gaas
C)gold
D)copper
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20
When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential __________is developed in that bulk device.

A)negative resistance
B)positive resistance
C)negative voltage
D)none of the mentioned
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21
The number of modes of operation for n type GaAs is:

A)two
B)three
C)four
D)five
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22
The free electron concentration in N-type GaAs is controlled by:

A)effective doping
B)bias voltage
C)drive current
D)none of the mentioned
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23
The modes of operation of a Gunn diode are illustrated in a plot of voltage applied to the Gunn diode v/s frequency of operation of Gunn diode.
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24
The mode of operation in which the Gunn diode is not stable is:

A)gunn oscillation mode
B)limited space charge accumulation mode
C)stable amplification mode
D)bias circuit oscillation mode
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