Deck 3: Transistor Biasing and Circuit Analysis

Question 1

Consider the circuit shown. VDS=3 V. If IDS=2mA, find VDD to bias circuit.

A)-30v
B)30v
C)33v
D)any value of voltage less than 12 v

Answer 1

33v

Question 2

To bias a e-MOSFET                        

A)we can use either gate bias or a voltage divider bias circuit
B)we can use either gate bias or a self bias circuit
C)we can use either self bias or a voltage divider bias circuit
D)we can use any type of bias circuit

Answer 2

we can use either gate bias or a voltage divider bias circuit

Question 3

Consider the following circuit. IDSS = 2mA, VDD = 30V. Find R, given that VP = - 2V.

A)10k?
B)4k?
C)2k?
D)5k?

Answer 3

4k?

Question 4

Process transconductance parameter is 40?A/V2. Find drain to source current in saturation.

A)0.10 ma
B)0.05ma
C)- 0.05ma
D)- 50a

Question 5

Consider the following circuit. Given that VDD = 15V, VP = 2V, and IDS = 3mA, to bias the circuit properly, select the proper statement.

A)rd < 6k?
B)rd > 6k?
C)rd > 4k?
D)rd < 4k?

Question 6

Consider the following circuit. Process transconductance parameter = 0.50 mA/V2, W/L=1, Threshold voltage = 3V, VDD = 20V. Find the operating point of circuit.

A)20v, 25ma
B)13v, 22ma
C)12.72v, 23.61ma
D)20v, 23.61ma

Question 7

Which of the following relation is true about gate current?

A)ig=id+is
B)id=ig
C)is= ig
D)ig=0

Question 8

For a fixed bias circuit the drain current was 1mA, what is the value of source current?

A)0ma
B)1ma
C)2ma
D)3ma

Question 9

For a fixed bias circuit the drain current was 1mA, VDD=12V, determine drain resistance required if VDS=10V?

A)1k?
B)1.5k?
C)2k?
D)4k?

Question 10

Which of the following equation brings the relation between gate to source voltage and drain current in Self Bias?

A)vgs=vdd
B)vgs=-id rs
C)vgs=0
D)vgs=1+id rs

Question 11

For a self-bias circuit, find drain to source voltage if VDD=12V, ID=1mA, Rs=RD=1K??

A)1v
B)2v
C)10v
D)5v

Question 12

Find the gate voltage for voltage divider having R1=R2=1K? and VDD=5V?

A)1v
B)5v
C)3v
D)2.5v

Question 13

Find the gate to source voltage for voltage divider having R1=R2=2K? and VDD=12V, ID=1mA and RS=4K??

A)3v
B)2v
C)0v
D)1v

Question 14

What will happen if values of Rs increase?

A)vgs increases
B)vgs decreases
C)vgs remains the same
D)vgs=0

Question 15

What is the current flowing through the R1 resistor for voltage divider (R1=R2=1K?, VDD=10V)?

A)5ma
B)3ma
C)1ma
D)2ma

Question 16

The h-parameters analysis gives correct results for                      

A)large signals only
B)small signals only
C)both large and small
D)not large nor small signals

Question 17

For what type of signals does a transistor behaves as linear device?

A)small signals only
B)large signals only
C)both large and small signal
D)no signal

Question 18

How many h-parameters are there for a transistor?

A)two
B)three
C)four
D)five

Question 19

The dimensions of hie parameters are

A)mho
B)ohm
C)farad
D)ampere

Question 20

The hfe parameter is called----------------in CE arrangement with output short circuited.

A)voltage gain
B)current gain
C)input impedance
D)output impedance

Question 21

What happens to the h parameters of a transistor when the operating point of the transistor changes?

A)it also changes
B)does not change
C)may or may not change
D)nothing happens

Question 22

If temperature changes, h parameters of a transistor            

A)also change
B)does not change
C)remains same
D)may or may not change

Question 23

In CE arrangement, the value of input impedance is approximately equal to            

A)hie
B)hib
C)hoe
D)hre

Question 24

How many h-parameters of a transistor are dimensionless?

A)four
B)two
C)three
D)one

Question 25

The values of h-parameters of a transistor in CE arrangement are---------------arrangement.

A)same as for cb
B)same as for cc
C)different from that in cb
D)similar to no