The total efficiency of an injection laser with GaAs active region is 12%. The applied voltage is 3.6 V and band gap energy for GaAs is 2.34 eV. Determine external power efficiency.
A) 7.8 %
B) 10 %
C) 12 %
D) 6 %
Correct Answer:
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Q4: The _ system is best developed and
Q5: Stimulated emission by recombination of injected carriers
Q6: In semiconductor injection laser, narrow line bandwidth
Q7: Injection laser have a high threshold current
Q8: ?T Is known as slope quantum efficiency. State
Q10: In a DH laser, the sides of
Q11: A particular laser structure is designed so
Q12: Gain guided laser structure are
A)chemical laser
B)gas laser
C)dh
Q13: Laser modes are generally separated by few
A)tenths
Q14: The spectral width of emission from the
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