The external power efficiency of an injection laser with a GaAs is 13% having band gap energy of 1.64 eV. Determine external power efficiency
A)0.198
B)0.283
C)0.366
D)0.467

Question

Quizplus · Accepted Answer

The external power efficiency is given by the ratio of the output optical power to the input electrical power. The output optical power is given by the product of the band gap energy and the external quantum efficiency. The external quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The number of photons emitted is given by the product of the injection current and the radiative recombination coefficient. The radiative recombination coefficient is given by the product of the spontaneous emission factor and the internal quantum efficiency. The internal quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The spontaneous emission factor is given by the ratio of the spontaneous emission rate to the total recombination rate. The total recombination rate is given by the sum of the radiative recombination rate and the non-radiative recombination rate. The non-radiative recombination rate is given by the product of the non-radiative recombination coefficient and the number of electrons injected. The non-radiative recombination coefficient is given by the ratio of the non-radiative recombination rate to the number of electrons injected. The injection current is given by the product of the forward bias voltage and the forward bias current. The forward bias voltage is given by the product of the band gap energy and the forward bias current. The forward bias current is given by the product of the forward bias voltage and the forward bias resistance. The forward bias resistance is given by the ratio of the forward bias voltage to the forward bias current. The external power efficiency is given by the product of the output optical power and the forward bias current. The output optical power is given by the product of the band gap energy and the external quantum efficiency. The external quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The number of photons emitted is given by the product of the injection current and the radiative recombination coefficient. The radiative recombination coefficient is given by the product of the spontaneous emission factor and the internal quantum efficiency. The internal quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The spontaneous emission factor is given by the ratio of the spontaneous emission rate to the total recombination rate. The total recombination rate is given by the sum of the radiative recombination rate and the non-radiative recombination rate. The non-radiative recombination rate is given by the product of the non-radiative recombination coefficient and the number of electrons injected. The non-radiative recombination coefficient is given by the ratio of the non-radiative recombination rate to the number of electrons injected. The injection current is given by the product of the forward bias voltage and the forward bias current. The forward bias voltage is given by the product of the band gap energy and the forward bias current. The forward bias current is given by the product of the forward bias voltage and the forward bias resistance. The forward bias resistance is given by the ratio of the forward bias voltage to the forward bias current. The external power efficiency is given by the product of the output optical power and the forward bias current. The output optical power is given by the product of the band gap energy and the external quantum efficiency. The external quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The number of photons emitted is given by the product of the injection current and the radiative recombination coefficient. The radiative recombination coefficient is given by the product of the spontaneous emission factor and the internal quantum efficiency. The internal quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The spontaneous emission factor is given by the ratio of the spontaneous emission rate to the total recombination rate. The total recombination rate is given by the sum of the radiative recombination rate and the non-radiative recombination rate. The non-radiative recombination rate is given by the product of the non-radiative recombination coefficient and the number of electrons injected. The non-radiative recombination coefficient is given by the ratio of the non-radiative recombination rate to the number of electrons injected. The injection current is given by the product of the forward bias voltage and the forward bias current. The forward bias voltage is given by the product of the band gap energy and the forward bias current. The forward bias current is given by the product of the forward bias voltage and the forward bias resistance. The forward bias resistance is given by the ratio of the forward bias voltage to the forward bias current. The external power efficiency is given by the product of the output optical power and the forward bias current. The output optical power is given by the product of the band gap energy and the external quantum efficiency. The external quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The number of photons emitted is given by the product of the injection current and the radiative recombination coefficient. The radiative recombination coefficient is given by the product of the spontaneous emission factor and the internal quantum efficiency. The internal quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The spontaneous emission factor is given by the ratio of the spontaneous emission rate to the total recombination rate. The total recombination rate is given by the sum of the radiative recombination rate and the non-radiative recombination rate. The non-radiative recombination rate is given by the product of the non-radiative recombination coefficient and the number of electrons injected. The non-radiative recombination coefficient is given by the ratio of the non-radiative recombination rate to the number of electrons injected. The injection current is given by the product of the forward bias voltage and the forward bias current. The forward bias voltage is given by the product of the band gap energy and the forward bias current. The forward bias current is given by the product of the forward bias voltage and the forward bias resistance. The forward bias resistance is given by the ratio of the forward bias voltage to the forward bias current. The external power efficiency is given by the product of the output optical power and the forward bias current. The output optical power is given by the product of the band gap energy and the external quantum efficiency. The external quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The number of photons emitted is given by the product of the injection current and the radiative recombination coefficient. The radiative recombination coefficient is given by the product of the spontaneous emission factor and the internal quantum efficiency. The internal quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The spontaneous emission factor is given by the ratio of the spontaneous emission rate to the total recombination rate. The total recombination rate is given by the sum of the radiative recombination rate and the non-radiative recombination rate. The non-radiative recombination rate is given by the product of the non-radiative recombination coefficient and the number of electrons injected. The non-radiative recombination coefficient is given by the ratio of the non-radiative recombination rate to the number of electrons injected. The injection current is given by the product of the forward bias voltage and the forward bias current. The forward bias voltage is given by the product of the band gap energy and the forward bias current. The forward bias current is given by the product of the forward bias voltage and the forward bias resistance. The forward bias resistance is given by the ratio of the forward bias voltage to the forward bias current. The external power efficiency is given by the product of the output optical power and the forward bias current. The output optical power is given by the product of the band gap energy and the external quantum efficiency. The external quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The number of photons emitted is given by the product of the injection current and the radiative recombination coefficient. The radiative recombination coefficient is given by the product of the spontaneous emission factor and the internal quantum efficiency. The internal quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The spontaneous emission factor is given by the ratio of the spontaneous emission rate to the total recombination rate. The total recombination rate is given by the sum of the radiative recombination rate and the non-radiative recombination rate. The non-radiative recombination rate is given by the product of the non-radiative recombination coefficient and the number of electrons injected. The non-radiative recombination coefficient is given by the ratio of the non-radiative recombination rate to the number of electrons injected. The injection current is given by the product of the forward bias voltage and the forward bias current. The forward bias voltage is given by the product of the band gap energy and the forward bias current. The forward bias current is given by the product of the forward bias voltage and the forward bias resistance. The forward bias resistance is given by the ratio of the forward bias voltage to the forward bias current. The external power efficiency is given by the product of the output optical power and the forward bias current. The output optical power is given by the product of the band gap energy and the external quantum efficiency. The external quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The number of photons emitted is given by the product of the injection current and the radiative recombination coefficient. The radiative recombination coefficient is given by the product of the spontaneous emission factor and the internal quantum efficiency. The internal quantum efficiency is given by the ratio of the number of photons emitted to the number of electrons injected. The spontaneous emission factor is given by the ratio of the spontaneous emission rate to the total recombination rate. The total recombination rate is given by the sum of the radiative recombination rate and the non-radiative recombination rate. The non-radiative recombination rate is given by the product of the non-radiative recombination coefficient and the number of electrons injected. The non-radiative recombination coefficient is given by the ratio of the non-radiative recombination rate to the number of electrons injected. The injection current is given by the product of the forward bias voltage and the forward bias current. The forward bias voltage is given

The External Power Efficiency of an Injection Laser with a GaAs