If an optical power level P in is incident on a photodiode, the electron-hole generation rate G ( x ) is given by G ( x ) = 0 s exp(- s x ) Here 0 is the incident photon flux per unit area given by 11eb873a_5ab3_121d_af56_8ff6b26553d3_SM4986_11 11eb873a_5ab3_121e_af56_c5f3add8d097_SM4986_00 Fig. 6.18 Absorption coefficients of Si as a function of wavelength where A is the detector area, R f is the surface reflectance, and hv is the photon energy. From this, show that the primary photocurrent in the depletion region of width w is given by Eq. (6.4).

Optical Fiber Communications 4th Edition by Gerd Keiser

النسخة 4الرقم المعياري الدولي: 978-0073380711

Optical Fiber Communications 4th Edition by Gerd Keiser

النسخة 4الرقم المعياري الدولي: 978-0073380711

تمرين 4

If an optical power level P in is incident on a photodiode, the electron-hole generation rate G ( x ) is given by
G ( x ) = 0 s exp(- s x )
Here 0 is the incident photon flux per unit area given by

Fig. 6.18 Absorption coefficients of Si as a function of wavelength
where A is the detector area, R f is the surface reflectance, and hv is the photon energy. From this, show that the primary photocurrent in the depletion region of width w is given by Eq. (6.4).

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Take into account a reflectivity at the...