Deck 2: BJT Stability and Biasing Techniques

Question 1

In the given circuit, what is the value of IC if the BJT is made of Silicon?

A)2.01 ma
B)2.01 ua
C)10.05 ma
D)10.05 ua

Answer 1

2.01 ma

Question 2

In the given circuit, using a silicon BJT, what is the value of VCE?

A)20 v
B)15.52 v
C)14.98 v
D)13.97 v

Answer 2

15.52 v

Question 3

In the given circuit, what is the value of VE when using a silicon BJT?

A)2.01 v
B)0.28 v
C)0 v
D)2.28 v

Answer 3

2.28 v

Question 4

In the given circuit using a silicon BJT, what is the value of saturation collector current?

A)10 ma
B)8.77 ma
C)6.67 ma
D)5 ma

Question 5

What is Stability factor?

A)ratio of change in collector current to change in a current amplification factor
B)ratio of change in collector current to change in base current
C)current amplification factor
D)ratio of base current to collector current

Question 6

The base current for a BJT remains constant at 5mA, the collector current changes from 0.2mA to 0.3 mA and beta was changed from 100 to 110, then calculate the value of S.

A)0.01m
B)1m
C)100m
D)25m

Question 7

For a n-p-n transistor, the collector current changed from 0.2mA to 0.22mA resulting a change of base emitter voltage from 0.8v to 0.8005V. What is the value of Stability factor?

A)0
B)0.25
C)0.04
D)0.333

Question 8

There are two transistors A and B having 'S' as 25 and 250 respectively, on comparing the value of S, we can say B is more stable than A.

Question 9

For a fixed bias circuit having Ic = 0.3mA and In=0.0003mA, S is

A)100
B)0
C)11
D)111

Question 10

For a fixed bias circuit having RC=2Kohm and VCC=60V, IB=0.25mA and S=101, find Vce.

A)12v
B)10v
C)5v
D)2.5v

Question 11

For an ideal transistor having a fixed bias configuration, what will be the value of Beta?

A)0
B)2
C)-1
D)1

Question 12

The temperature changes do not affect the Stability.

Question 13

Comparing fixed and collector to base bias which of the following statement is true?

A)fixed bias is more stable
B)collector to base bias is more stable
C)both are the same in terms of stability
D)depends on the design

Question 14

The compensation techniques are used to                   

A)increase stability
B)increase the voltage gain
C)improve negative feedback
D)decrease voltage gain

Question 15

Compensation techniques refer to the use of                   

A)diodes
B)capacitors
C)resistors
D)transformers

Question 16

In a silicon transistor, which of the following change significantly to the change in IC?

A)vce
B)ib
C)vbe
D)bie

Question 17

What is the compensation element used for variation in VBE and ICO?

A)diodes
B)capacitors
C)resistors
D)transformers

Question 18

The expression for IC in the compensation for instability due to ICO variation                   

A)?i+?io+?ico
B)?i+?io
C)?io+?ico
D)?i+?ico

Question 19

Which of the following has a negative temperature coefficient of resistance?

A)sensistor
B)diode
C)thermistor
D)capacitor

Question 20

Which of the following has a negative temperature coefficient of resistance?

A)capacitor
B)diode
C)thermistor
D)sensistor

Question 21

Increase in collector emitter voltage from 5V to 8V causes increase in collector current from 5mA to 5.3mA. Determine the dynamic output resistance.

A)20k?
B)10k?
C)50k?
D)60k?

Question 22

The output resistance of CB transistor is given by                    

A)?vcb/?ic
B)?vbe/?ib
C)?vbe/?ic
D)?veb/?ie

Question 23

The negative sign in the formula of amplification factor indicates                   

A)that ie flows into transistor while ic flows out it
B)that ic flows into transistor while ie flows out it
C)that ib flows into transistor while ic flows out it
D)that ic flows into transistor while ib flows out it

Question 24

In the given situation for n-channel JFET, we get drain-to-source current is 5mA. What is the current when VGS = - 6V?

A)5 ma
B)0.5a
C)0.125 a
D)0.5a.