One major advantage of a power FET over a bipolar junction transistor is

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FETs (Field-Effect Transistors) are voltage-controlled devices, which inherently have a high input impedance, reducing the risk of thermal runaway. This is in contrast to bipolar junction transistors (BJTs) which are current-controlled and can be more susceptible to thermal runaway due to their lower input impedance and the feedback effect of temperature on current flow.

One Major Advantage of a Power FET Over a Bipolar