IMPATT diodes employ impact ionization technique which is a noisy mechanism of generating charge carriers.
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Q5: 3 IMPATT DIODES, SCHOTTKY BARRIER DIODES, PIN
Q6: To prevent an IMPATT diode from burning,
Q7: The number of semiconductor layers in IMPATT
Q8: The resonant frequency of an IMPATT diode
Q9: If the length of the intrinsic region
Q11: An essential requirement for the BARITT diode
Q12: If the RMS peak current in an
Q13: If the critical field in a Gunn
Q14: The production of power at higher frequencies
Q15: Microwave tubes are power sources themselves at
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